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SUD50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0095 at V GS = 10 V
30
0.014 at V GS = 4.5 V
I D (A) b
63 b
52 b
FEATURES
? TrenchFET ? Power MOSFET
? Optimized for High- or Low-Side
? 100 % R g Tested
A v aila b le
RoHS*
COMPLIANT
APPLICATIONS
? DC/DC Converters
? Synchronous Rectifiers
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
S
Ordering Information: SUD50N03-09P
SUD50N03-09P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
30
± 20
Unit
V
Continuous Drain Current a
T C = 25 °C
T C = 100 °C
I D
63 b
44.5 b
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
I DM
I S
50
5
A
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I AS
E AS
P D
T J , T stg
35
61
65.2
7.5 a
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum
Junction-to-Ambient a
t ≤ 10 s
Steady State
R thJA
16
40
20
50
°C/W
Maximum Junction-to-Case
R thJC
1.8
2.3
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71856
S-80793-Rev. G, 14-Apr-08
www.vishay.com
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